Nd:GdVO4
(Neodymium Doped Gadolinium Orthovanadate ) Nd:GdVO4, is a promising material for diode pumped lasers. Similar to the more well-known Nd:YVO4 crystal, Nd:GdVO4 crystal also exhibits high gain, low ..
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Nd:GdVO4
(Neodymium Doped Gadolinium Orthovanadate )
Nd:GdVO4, is a promising material for diode pumped lasers. Similar to the more well-known Nd:YVO4 crystal, Nd:GdVO4 crystal also exhibits high gain, low threshold, and high absorption coefficients at pumping wavelengths. Nd:GdVO4 has the additional advantage over Nd:YVO4 of a much higher thermal conductivity. For CW lasing at 1.06 um and 1.34 um and intracavity doubling with KTP and LBO, the gadolinium vanadate have produced a higher slope efficiency or optical conversion than Nd:YVO4.
UPT’s Nd:GdVO4 is featured by
• Large stimulated emission cross section at laser wavelength;
• High absorption coefficient and wide bandwidth at pump wavelength;
• Low dependency on pump wavelength;
• Good thermal conductivity;
• Low lasing threshold and high slope efficiency;
• High laser induced damage threshold;
• Strongly-polarized laser output.
Material Properties: Comparing Nd:GdVO4 with Nd:YVO4
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Crystal
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Nd:GdVO4
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Nd:YVO4
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Crystal Structure, Space Group
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Tetragonal, I41/amd
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Tetragonal, I41/amd
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Lattice constants (nm)
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a:0.721 b:0.635
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a:0.721 b:0.629
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Melting temperature(0 C)
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1780
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1825
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Thermal expansion @250C, x10-6/0C
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a
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1.7
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a
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4.43
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b
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7.3
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b
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11.4
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Specific heat @250C, cal/mol·K
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32.6
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24.6
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dn / dT, x10-6/0C
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4.7
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2.7
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Information Regarding Neodymium Laser Host Crystals
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Crystal
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Nd:YVO4
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Nd:GdVO4
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Nd:YAG
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Laser wavelengths
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1064.3nm,1342.0 nm
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1062.9 nm,1340 nm
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1064.2 nm,1338.2 nm
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Emission bandwidth(linewidth at 1064 nm)
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0.8nm
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No data
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0.45nm
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Effective laser cross section (emission cross section at 1064 nm)
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15.6 x 10-19 cm2
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7.6 x 10-19cm2
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6.5 x 10-19cm2
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Polarization
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Parallel to c-axis
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Parallel to c-axis
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unpolarized
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Radioactive lifetime (microseconds) at 1% Nd doping
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~ 100 µs
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~ 95 µs
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230 µs
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Pump wavelength
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808.5 nm
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808.4 nm
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807.5 nm
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Thermal conductivity, W/m/K
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5.1
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11.7
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14
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Peak pump absorption at 1% doping
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~ 41 cm-1
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~ 57 cm-1
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UPT offer Nd:GdVO4 specifications:
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Doping
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0.1%~3%
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Doping concentration tolerance
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±0.05%(atm%<1%),±0.1%(atm%≥1%)
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Orientation
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A-cut/C-cut +/-0.5deg.
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Dimension Tolerance
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±0.1mm
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Flatness
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λ/10 @ 632.8nm
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Wavefront distortion
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λ/6@ 632.8nm
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Surface Quality
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10/5 per MIL-O-13830B
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Parallelism
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10″
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Perpendicularity
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10′
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Bevel/Chamfer
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<0.1mm@45deg.
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Chips
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<0.1mm
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Clear Aperture
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>95%
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Coating
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AR/HR/PR coating upon customer’s request
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Damage Threshold
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750MW/CM2 at 1064nm, TEM00, 10ns, 10Hz
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Quality Warranty Period
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One year under proper use
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Note: Nd:GdVO4 crystals with diffusion bonded undoped GdVO4 endcaps are also available. Other specifications of Nd:GdVO4 and coatings are also available upon request.