LiNbO Crystal is widely used as frequency doublers for wavelength 1 m and optical parametric oscillators (OPOs) pumped at 1064nm as well as quasi-phase-matched (QPM) devices. Due to its large Electro..
LiNbO Crystal is widely used as frequency doublers for wavelength > 1 m and optical parametric oscillators (OPOs) pumped at 1064nm as well as quasi-phase-matched (QPM) devices. Due to its large Electro-Optic ((E-O) and Acousto-Optic (A-O) coefficient, LiNbO crystal is the most commonly used material for Pockel Cells, Q-switches and phase modulators, waveguide substrate, and surface acoustic wave (SAW) wafers, etc.
Crystal Structure
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Trigonal, space group R 3c
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Cell Parameters
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a = 0.515, c = 13.863, Z = 6
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Melting Point
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1255 +/-5℃
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Curie Point
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1140 +/-5℃
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Mohs Hardness
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5
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Density
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4.64 g/cm 3
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Absorption Coefficient
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~ 0.1%/cm @ 1064 nm
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Solubility:
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insoluble in H 2 O
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Relative Dielectric Constant
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ε T11/ε 0 : 85
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ε T33/ε 0 : 29.5
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Thermal Expansion Coefficients at 25℃
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||a, 2.0 x 10 -6 /K @ 25℃
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||c, 2.2 x 10 -6 /K @ 25℃
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Thermal Conductivity
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38 W /m /K @ 25℃
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Transparency Range
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420 - 5200 nm
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Refractive Indices
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n e = 2.146, n o = 2.220 @ 1300 nm
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n e = 2.156, n o = 2.322 @ 1064 nm
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n e = 2.203, n o = 2.286 @ 632.8 m
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Optical Homogeneity
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~ 5 x 10 -5 /cm
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Sellmeier Equations (l in mm)
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n o 2 (l) = 4.9048+0.11768/(l2- 0.04750) - 0.027169l2
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n e 2 ( l) = 4.5820+0.099169/( l2 - 0.04443) - 0.021950 l2
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NLO Coefficients
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d 33 = 34.4 pm/V
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d 31 = d 15 = 5.95 pm/V
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d 22 = 3.07 pm/V
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Electro-Optic Coefficients
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γT 33 = 32 pm/V, γS 33 = 31 pm/V
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γ T 31 = 10 pm/V, γ S 31 = 8.6 pm/V
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γ T 22 = 6.8 pm/V, γS 22 = 3.4 pm/V,
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Half-Wave Voltage, DC
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3.03 KV
4.02 KV
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Electrical field ||z, light ^ z:
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Electrical field ||x or y, light || z:
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Damage Threshold
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200 MW/cm 2 (10 ns)
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Efficiency NLO Coefficients
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d eff =5.7pm/V or~14.6xd 36 (KDP) for frequency doubling 1300 nm;
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d eff =5.3pm/V or~13.6xd 36 (KDP) for OPO pumped at 1064nm;
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d eff =17.6pm/V or~45xd 36 (KDP) for quasi-phase-matched structure;
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Tolerance of dimension
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Dimension+/-0.1 mm, L: ±0.1mm
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Flatness
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λ/8 @ 632.8nm
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Wavefront distortion
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<λ/4@ 632.8nm
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Surface quality
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10/5 per MIL-O-13830A
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Parallelism
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10″
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Perpendicularity
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5′
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Bevel/chamfer
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<0.1mm@45deg.
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Chips
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<0.1mm
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Angle Tolerance
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△θ≤±0.5°, △φ≤±0.5°
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Coating
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AR/P- coating Upon request
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